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ACT-F512K8 High Speed 4 Megabit Monolithic FLASH
CIRCUIT TECHNOLOGY
Features
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Low Power Monolithic 512K x 8 FLASH TTL Compatible Inputs and CMOS Outputs Access Times of 60, 70, 90, 120 and 150ns +5V Programing, 5V 10% Supply 100,000 Erase / Program Cycles Low Standby Current Page Program Operation and Internal Program Control Time Supports Full Chip Erase Embedded Erase and Program Algorithms Supports Full Chip Erase MIL-PRF-38534 Compliant Circuits Available
Industry Standard Pinouts Packaging - Hermetic Ceramic
32 Lead, 1.6" x .6" x .20" Dual-in-line Package (DIP), Aeroflex code# "P4" q 32 Lead, .82" x .41" x .11" Ceramic Flat Package (FP), Aeroflex code# "F6" q 32 Lead, .82" x .41" x .132" Ceramic Flat Package (FP Lead Formed), Aeroflex code# "F7"
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Sector Architecture
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8 Equal size sectors of 64K bytes each Any Combination of Sectors ccan be erased with one command sequence.
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Commercial, Industrial and Military Temperature Ranges DESC SMD Pending 5962-96692 (P4,F6,F7)
Block Diagram - DIP (P4) & Flat Packages (F6,F7)
CE WE OE A0 - A18 Vss 512Kx8 Vcc 8 I/O0-7 Pin Description I/O0-7 Data I/O
General Description
The ACT-F512K8 is a high speed, 4 megabit CMOS monolithic Flash module designed for full temperature range military, space, or high reliability applications. This device is input TTL and output CMOS compatible. The command register is written by bringing WE to a logic low level (VIL), while CE is low and OE is at logic high level (VIH). Reading is accomplished by chip Enable (CE) and Output Enable (OE) being logically active, see Figure 9. Access time grades of 60ns, 70ns, 90ns, 120ns and 150ns maximum are standard. The ACT-F512K8 is available in a choice of
A0-18 Address Inputs WE CE OE VCC VSS NC Write Enable Chip Enable Output Enable Power Supply Ground Not Connected
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General Description, Cont'd,
hermetically sealed ceramic packages; a 32 lead .82" x .41" x .11" flat package in both formed or unformed leads or a 32 pin 1.6"x.60" x.20" DIP package for operation over the temperature range -55C to +125C and military environmental conditions. The flash memory is organized as 512Kx8 bits and is designed to be programmed in-system with the standard system 5.0V Vcc supply. A 12.0V VPP is not required for write or erase operations. The device can also be reprogrammed with standard EPROM programmers (with the proper socket). The standard ACT-F512K8 offers access times between 60ns and 150ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the device has separate chip enable (CE), write enable (WE) and output enable (OE) controls. The ACT-F512K8 is command set compatible with JEDEC standard 1 Mbit EEPROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V Flash or EPROM devices. The ACT-F512K8 is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Typically, each sector can be programmed and verified in less than 0.3 second. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array, (if it is not already programmed before) executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The device is typically erased and verified in 1.5 seconds (if already completely preprogrammed). Also the device features a sector erase architecture. The sector mode allows for 64K byte blocks of memory to be erased and reprogrammed without affecting other blocks. The ACT-F512K8 is erased when shipped from the factory. The device features single 5.0V power supply operation for both read and write functions. lnternally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of D7 or by the Toggle Bit feature on D6. Once the end of a program or erase cycle has been completed, the device internally resets to the read mode. All bits of each die, or all bits within a sector of a die, are erased via Fowler-Nordhiem tunneling. Bytes are programmed one byte at a time by hot electron injection. A DESC Standard Military Drawing (SMD) number is pending.
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Absolute Maximum Ratings
Parameter Case Operating Temperature Storage Temperature Range Supply Voltage Range Signal Voltage Range (Any Pin Except A9) Note 1 Maximum Lead Temperature (10 seconds) Data Retention Endurance (Write/Erase cycles) A9 Voltage for sector protect, Note 2 VID Symbol TC TSTG VCC VG Range -55 to +125 -65 to +150 -2.0 to +7.0 -2.0 to +7.0 300 10 100,000 Minimum -2.0 to +14.0 V Units C C V V C Years
Note 1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may undershoot VSS to -2.0v for periods of up to 20ns. Maximum DC voltage on input and I/O pins is VCC + 0.5V. During voltage transitions, inputs and I/O pins may overshoot to VCC + 2.0V for periods up to 20 ns. Note 2. Minimum DC input voltage on A9 is -0.5V. During voltage transitions, A9 may undershoot VSS to -2.0V for periods of up to 20ns. Maximum DC input voltage on A9 is +12.5V which may overshoot to 14.0V for periods up to 20ns.
Normal Operating Conditions
Symbol VCC VIH VIL Tc VID Parameter Power Supply Voltage Input High Voltage Input Low Voltage Operating Temperature (Military) A9 Voltage for sector protect Minimum +4.5 +2.0 -0.5 -55 11.5 Maximum +5.5 VCC + 0.5 +0.8 +125 12.5 Units V V V C V
Capacitance
(VIN= 0V, f = 1MHz, Tc = 25C) Symbol CAD COE CWE CCE CI/O Parameter A0 - A18 Capacitance OE Capacitance Write Enable Capacitance Chip Enable Capacitance I/O0 - I/O7 Capacitance Maximum 15 15 15 15 15 Units pF pF pF pF pF
Parameters Guaranteed but not tested
DC Characteristics - CMOS Compatible
(Vcc = 5.0V, Vss = 0V, Tc = -55C to +125C, unless otherwise indicated) Parameter Input Leakage Current Output Leakage Current Active Operating Supply Current for Read (1) Active Operating Supply Current for Program or Erase (2) Operating Standby Supply Current Output Low Voltage Output High Voltage Low Power Supply Lock-Out Voltage (4) Sym ILI Conditions VCC = 5.5V, VIN = GND to VCC Speeds 60, 70, 90, 120 & 150ns Minimum Maximum 10 10 50 60 1.6 0.45 0.85 x VCC 3.2 Units A A mA mA mA V V V
ILOX32 VCC = 5.5V, VIN = GND to VCC ICC1 ICC2 ICC3 VOL VOH VLKO CE = VIL, OE = VIH, f = 5MHz CE = VIL, OE = VIH VCC = 5.5V, CE = VIH, f = 5MHz IOL = +8.0 mA, VCC = 4.5V IOH = -2.5 mA, VCC = 4.5V
Note 1. The Icc current listed includes both the DC operating current and the frequency dependent component (At 6 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIN. Note 2. Icc active while Embedded Algorithm (Program or Erase) is in progress. Note 3. DC Test conditions: VIL = 0.3V, VIH = VCC - 0.3V, unless otherwise indicated. Note 4. Parameter Guaranteed by design, but not tested.
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AC Characteristics - Read Only Operations
(Vcc = 5.0V, Vss = 0V, Tc = -55C to +125C) Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Enable to Output Valid Chip Enable to Output High Z (1) Output Enable High to Output High Z(1) Output Hold from Address, CE or OE Change, Whichever is First Note 1. Guaranteed by design, but not tested Symbol tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tRC tACC tCE tOE tDF tDF tOH 0 60 60 60 30 20 20 0 -60 70 70 70 35 20 20 0 -70 90 90 90 35 20 20 0 -90 -120 120 120 120 50 30 30 0 -150 150 150 150 55 35 35 JEDEC Stand'd Min Max Min Max Min Max Min Max Min Max Units ns ns ns ns ns ns ns
AC Characteristics - Write/Erase/Program Operations, WE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55C to +125C) Parameter Write Cycle Time Chip Enable Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Write Enable Pulse Width High Duration of Byte Programming Operation Typ = 16 s Sector Erase Time Read Recovery Time before Write Vcc Setup Time Chip Programming Time Chip Erase Time tWHWH3 Symbol tAVAC tELWL tWLWH tAVWL tDVWH tWHDX tWLAX tWHWL tWHWH1 tWHWH2 tGHWL tVCE 0 50 50 120 tWC tCE tWP tAS tDS tDH tAH tWPH 60 0 40 0 40 0 45 20 -60 70 0 45 0 45 0 45 20 -70 90 0 45 0 45 0 45 20 -90 -120 120 0 50 0 50 0 50 20 -150 150 0 50 0 50 0 50 20 JEDEC Stand'd Min Max Min Max Min Max Min Max Min Max Units ns ns ns ns ns ns ns ns s Sec s s 50 120 Sec Sec
14 TYP 14 TYP 14 TYP 14 TYP 14 TYP 30 0 50 50 120 30 0 50 50 120 30 0 50 50 120 30 0 50 30
AC Characteristics - Write/Erase/Program Operations, CE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55C to +125C) Parameter Write Cycle Time Write Enable Setup Time Chip Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Chip Select Pulse Width High Duration of Byte Programming Sector Erase Time Read Recovery Time Chip Programming Time Chip Erase Time tWHWH3 Symbol tAVAC tWLEL tELEH tAVEL tDVEH tEHDX tELAX tEHEL tWHWH1 tWHWH2 tWC tWS tCP tAS tDS tDH tAH tCPH 60 0 40 0 40 0 45 20 -60 70 0 45 0 45 0 45 20 -70 90 0 45 0 45 0 45 20 -90 -120 120 0 50 0 50 0 50 20 -150 150 0 55 0 55 0 55 20 JEDEC Stand'd Min Max Min Max Min Max Min Max Min Max Units ns ns ns ns ns ns ns ns s Sec ns 50 120 Sec Sec
14 TYP 14 TYP 14 TYP 14 TYP 14 TYP 30 0 50 120 0 50 120 30 0 50 120 30 0 50 120 30 0 30
tGHEL
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Device Operation
The ACT-F512K8 Monolithic is composed of One, Four megabit flash device. Programming of the ACT-F512K8 is accomplished by executing the program command sequence. The program algorithm, which is an internal algorithm, automatically times the program pulse widths and verifies proper cell status. Sectors can be programed and verified in less than 1 second. Erase is accomplished by executing the erase command sequence. The erase algorithm, which is internal, automatically preprograms the array if it is not already programed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell status. The entire memory is typically erased and verified in 1.5 seconds (if pre-programmed). The sector mode allows for 64K byte blocks of memory to be erased and reprogrammed without affecting other blocks.
WRITE
Device erasure and programming are accomplished via the command register. The contents of the register serve as input to the internal state machine. The state machine outputs dictate the function of the device. The command register itself does not occupy an addressable memory location. The register is a latch used to store the command, along with address and data information needed to execute the command. The command register is written by bringing WE to a logic low level (VIL), while CE is low and OE is at VIH. Addresses are latched on the falling edge of WE or CE, whichever happens later. Data is latched on the rising edge of the WE or CE whichever occurs first. Standard microprocessor write timings are used. Refer to AC Program Characteristics and Waveforms, Figures 3, 8 and 13.
Command Definitions Bus Operation
READ
The ACT-F512K8 has two control functions, both of which must be logically active, to obtain data at the outputs. Chip Enable (CE) is the power control and should be used for device selection. Output-Enable (OE) is the output control and should be used to gate data to the output pins of the chip selected. Figure 7 illustrates AC read timing waveforms. Device operations are selected by writing specific address and data sequences into the command register. Table 3 defines these register command sequences.
READ/RESET COMMAND
The read or reset operation is initiated by writing the read/reset command sequence into the command register. Microprocessor read cycles retrieve array data from the memory. The device remains enabled for reads until the command register contents are altered. The device will automatically power-up in the read/reset state. In this case, a command sequence is not required to read data. Standard microprocessor read cycles will retrieve array data. The device will automatically power-up in the read/reset state. In this case, a command sequence is not required to read data. Standard Microprocessor read cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Characteristics and Figure 7 for the specific timing parameters.
OUTPUT DISABLE
With Output-Enable at a logic high level (VIH), output from the device is disabled. Output pins are placed in a high impedance state.
STANDBY MODE
The ACT-F512K8 standby mode consumes less than 6.5 mA. In the standby mode the outputs are in a high impedance state, independent of the OE input. If the device is deselected during erasure or programming, the device will draw active current until the operation is completed.
BYTE PROGRAMING
The device is programmed on a byte-byte basis. Programming is a four bus cycle operation. There are two "unlock" write cycles. These are followed by the program Table 2 - Sector Addresses Table
Table 1 - Bus Operations
Operation READ STANDBY OUTPUT DISABLE WRITE ENABLE SECTOR PROTECT VERIFY SECTOR PROTECT
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CE OE WE A0 A1 A9 L H L L L L L X H H VID L H X H L L H A0 A1 A9 X X X X X X
I/O DOUT HIGH Z HIGH Z DIN X Code SA0 SA1 SA2 SA3 SA4
A16 A15 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1
A14 0 1 0 1 0 1 0 1
Address Range 00000h - 03FFFh 04000h - 07FFFh 08000h - 0BFFFh 0C000h - 0FFFFh 10000h - 13FFFh 14000h - 17FFFh 18000h - 1BFFFh 1C000h - 1FFFFh
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A0 A1 A9 X L X H VID VID
SA5 SA6 SA7
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Table 3 -- Commands Definitions
Command Sequence Required Read/Reset Read/Reset Autoselect Byte Program Chip Erase Sector Erase 1 4 4 6 6 6 Bus Write Cycles First Bus Write Second Bus Write Third Bus Write Cycle Cycle Cycle Addr XXXH 5555H 5555H 5555H 5555H 5555H Data F0H AAH AAH AAH AAH AAH 2AAAH 2AAAH 2AAAH 2AAAH 2AAAH 55H 55H 55H 55H 55H 5555H 5555H 5555H 5555H 5555H F0H 90H A0H 80H 80H PA 5555H 5555H PD AAH AAH 2AAAH 2AAAH 55H 55H 5555H SA 10H 30H RA RD Addr Data Addr Data Fourth Bus Read/Write Cycle Addr Data Fifth Bus Write Sixth Bus Write Cycle Cycle Addr Data Addr Data
Sector Erase Suspend Erase can be suspended during sector erase with Address (Don't care), Data (B0H) Sector Erase Resume Erase can be resumed after suspend with Address (Don't care), Data (30H)
NOTES: 1. Address bit A15, A16, A17 and A18 = X = Don't Care. Write Sequences may be initiated with A15 in either state. 2. Address bit A15, A16, A17 and A18 = X = Don't Care for all address commands except for Program Address (PA) and Sector Address (SA). 3. RA = Address of the memory location to be read PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse. SA = Address of the sector to be erased. The combination of A18, A17, A16 will uniquely select any sector. 4. RD = Data read from location RA during read Operation. PD = Data to be programmed at location PA. Data is latched on the rising edge of WE.
set-up command and data write cycles. Addresses are latched on the falling edge of CE or WE, whichever occurs later, while the data is latched on the rising edge of CE or WE whichever occurs first. The rising edge of CE or WE begins programming. Upon executing the program algorithm command sequence the system is not required to provide further controls or timings. The device will automatically provide adequate internally generated program pulses and verity the programmed cell status. The automatic programming operation is completed when the data on D7 is equivalent to data written to this bit at which time the device returns to the read mode and addresses are no longer latched. The device requires a valid address be supplied by the System at this time. Data Polling must be performed at the memory location which is being programmed. Programming is allowed in any address sequence and across sector boundaries. Figure 3 illustrates the programming algorithm using typical command strings and bus operations.
SECTOR ERASE
Sector erase is a six bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "setup" command. Two more "unlock" write cycles are then followed by the sector erase command. The sector address (any address location within the desired sector) is latched on the falling edge of WE, while the command (data) is latched on the rising edge of WE. A time-out of 100s from the rising edge of the last sector erase command will initiate the sector erase command(s). Multiple sectors may be erased concurrently by writing the six bus cycle operations as described above. This sequence is followed with writes of the sector erase command 30H to address in other sectors desired to be concurrently erased. A time-out of 100s from the rising edge of the WE pulse for the last sector erase command will initiate the sector erase. If another sector erase command is written within the 100s time-out window the timer is reset. Any command other than sector erase within the time-out window will reset the device to the read mode, ignoring the previous command string. Loading the sector erase buffer may be done in any sequence and with any number of sectors (0 to 7). Sector erase does not require the user to program the device prior to erase. The device automatically programs all memory locations in the sector(s) to be erased prior to electrical erase. When erasing a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any controls or timings during these operations.
CHIP ERASE
Chip erase is a six bus cycle operation. There are two 'unlock' write cycles. These are followed by writing the 'set-up' command. Two more 'unlock' write cycles are then followed by the chip erase command. Chip erase does not require the user to program the device prior to erase. Upon executing the erase algorithm (Figure 4) sequence the device automatically will program and verify the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. The automatic erase begins on the rising edge of the last WE pulse in the command sequence and terminates when the data in D7 is "1" (see Write Operation Status section - Table 4) at which time the device returns to read the mode. See Figures 4 and 9.
Data Protection
The ACT-F512K8 is designed to offer protection against accidental erasure or programming caused by spurious system level singles that may exist during power transitions. During power up the device automatically resets the internal state machine in the read mode. Also, with
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its control register architecture, alteration of the memory content only occurs after successful completion of specific multi-bus cycle command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from Vcc power-up and power-down transitions or system noise.
LOW Vcc WRITE INHIBIT
To avoid initiation of a write cycle during Vcc power-up and power-down, a write cycle is locked out for VCC less than 3.2V (typically 3.7V). If VCC < VLKO, the command register is disabled and all internal program/erase circuits are disabled. Under this condition the device will reset to read mode. Subsequent writes will be ignored until the Vcc level is greater than VLKO. It is the users responsibility to ensure that the control pins are logically correct to prevent unintentional writes when Vcc is above 3.2V.
rithm operation is close to being completed, data pins (D7) change asynchronously while the output enable (OE) is asserted low. This means that the device is driving status information on D7 at one instance of time and then that byte's valid data at the next instant of time. Depending on when the system samples the D7 Output, it may read the status or valid data. Even if the device has completed internal algorithm operation and D7 has a valid data, the data outputs on D0 - D6 may be still invalid. The valid data on D0 - D7 will be read on the successive read attempts. The Data Polling feature is only active during the programming algorithm, erase algorithm, or sector erase time-out. See Figures 6 and 10 for the Data Polling specifications.
D6 TOGGLE BIT
The ACT-F512K8 also features the "Toggle Bit" as a method to indicate to the host system that algorithms are in progress or completed. During a program or erase algorithm cycle, successive attempts to read data from the device will result in D6 toggling between one and zero. Once the program or erase algorithm cycle is completed, D6 Will stop toggling and valid data will be read on successive attempts. During programming the Toggle Bit is valid after the rising edge of the fourth WE pulse in the four write pulse sequence. For chip erase the Toggle Bit is valid after the rising edge of the sixth WE pulse in the six write pulse sequence. For Sector erase, the Toggle Bit is valid after the last rising edge of the sector erase WE pulse. The Toggle Bit is active during the sector time out. See Figure 1 and 5.
WRITE PULSE GLITCH PROTECTION
Noise pulses of less than 5ns (typical) on OE, CE or WE will not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding anyone of OE = VIL, CE = VIH or WE = VIH. To initiate a write cycle CE and WE must be logical zero while OE is a logical one.
POWER-UP WRITE INHIBIT
Power-up of the device with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE. The internal state machine is automatically reset to the read mode on power-up.
D5 EXCEEDED TIMING LIMITS
D5 will indicate if the program or erase time has exceeded the specified limits. Under these conditions D5 will produce a "1". The Program or erase cycle was not successfully completed. Data Polling is the only operation function of the device under this condition. The CE circuit will partially power down the device under these conditions by approximately 2 mA. The OE and WE pins will control the output disable functions as shown in Table 1. To reset the device, write the reset command sequence to the device. This allows the system to continue to use the other active sectors in the device.
Write Operation Status
D7 DATA POLLING
The ACT-F512K8 features Data Polling as a method to indicate to the host that the internal algorithms are in progress or completed. During the program algorithm, an attempt to read the device will produce compliment data of the data last written to D7. During the erase algorithm, an attempt to read the device will produce a "0" at the D7 Output. Upon completion of the erase algorithm an attempt to read the device will produce a "1" at the D7 Output. For chip Erase, the Data Polling is valid after the rising edge of the sixth WE pulse in the six write pulse sequence. For sector erase, the Data Polling is valid after the last rising edge of the sector erase WE pulse. Data polling must be performed at a sector address within any of the sectors being erased and not a protected sector. Otherwise, the status may not be valid. Once the algoAeroflex Circuit Technology
D3 SECTOR ERASE TIMER
After the completion of the initial sector erase command sequence the sector erase time-out will begin. D3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase command sequence.
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If Data Polling or the Toggle Bit indicates the device has been written with a valid erase command, D3 may be used to determine if the sector erase timer window is still open. If D3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit. If D3 is low ("0"), the device will accept additional sector erase commands. To ensure the command has been accepted, the software should check the status of D3 prior to and following each subsequent sector erase command. If D3 were high on the second status check, the command may not have been accepted. See Table 4
00H for unprotected sector. In this mode, the lower order addresses, except for 0, A1, and A6 are don't care. It is also possible to verify if a sector is protected during the sector protection operation. This is done by setting A6 = CE = OE = VIL and WE = VIH (A9 remains high at VID). Reading the device at address location XXX2H, where the higher order addresses (A18, A17, and A16) define a particular sector, will produce 01H at data outputs (D0 - D7) for a protected sector.
SECTOR UNPROTECT
The ACT-F512K8 also features a sector unprotect mode, so that a protected sector may be unprotected to incorporate any changes in the code. All sectors should be protected prior to unprotecting any sector. To activate this mode, the programming equipment must force Vid on control pins OE, CE, and address pin A9. The address pins A6, A16, and A12 should be set to VIH. The unprotection mechanism begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. It is also possible to determine if a sector is unprotected in the system by writing the autoselect command and A6 is set at VIH. Performing a read operation at address location XXX2H, where the higher order addresses (A18, A17, and A16) define a particular sector address, will produce 00H at data outputs (D0-D7) for an unprotected sector.
Sector Protection Algorithims
SECTOR PROTECTION
The ACT-F512K8 features hardware sector protection which will disable both program and erase operations to an individual sector or any group of sectors. To activate this mode, the programming equipment must force VID on control pin OE and address pin A9. The sector addresses should be set using higher address lines A18, A17, and A16. The protection mechanism begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9 with CE and OE at VIL and WE at VIH. Scanning the sector addresses (A16, A17, and A18) while (A6, A1, A0) = (0, 1, 0,) will produce a logical "1" code at device output D0 for a protected sector. Otherwise the device will read
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Table 4 -- Hardware Sequence Flags
Status In Progress Auto-Programming Programming in Auto Erase Exceeding Time Limits Auto-Programming Programming in Auto Erase D7 D7 0 D7 0 D6 Toggle Toggle Toggle Toggle D5 D3 0 0 1 1 0 1 1 1 D2 - D0 D
D
Figure 1 AC Waveforms for Toggle Bit During Embedded Algorithm Operations
CE
tOEH
WE
tOES
OE
(1)
Data D0-D7
D6=Toggle
D6=Toggle
D6 Stop Toggle
D0-D7 Valid
Note: 1. D6 stops toggling (The device has completed the embedded operation)
Figure 2 AC Test Circuit
Current Source IOL
Parameter Input Pulse Level
To Device Under Test CL = 50 pF IOH Current Source VZ ~ 1.5 V (Bipolar Supply)
Typical 0 - 3.0 5 1.5 50
Units V ns V pF
Input Rise and Fall Input and Output Timing Reference Level Output Lead Capacitance
Notes: 1) VZ is programmable from -2V to +7V. 2) IOL and IOH programmable from 0 to 16 mA. 3) Tester Impedance ZO = 75. 4) VZ is typically the midpoint of VOH and VOL. 5) IOL and IOH are adjusted to simulate a typical resistance load circuit. 6) ATE Tester includes jig capacitance.
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Figure 3 Programming Algorithm
Bus Operations Standby (1) Write Read Standby (1)
Command Sequence
Comments
Program
Valid Address/Data Sequence Data Polling to Verify Programming Compare Data Output to Data Expected
Note: 1. Device is either powered-down, erase or program inhibit.
Start
Write Program Command Sequence (See Below)
Data Poll Device
Increment Address
No Last Address ? Yes Programming Complete
Program Command Sequence (Address/Command):
5555H/AAH
2AAAH/55H
5555H/A0H
Programming Address/Program Data
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Figure 4 Erase Algorithm
Bus Operations Standby Write Read Standby
Command Sequence
Comments
Program
Valid Address/Data Sequence Data Polling to Verify Programming Compare Data Output to Data Expected
Start
Write Erase Command Sequence (See Below)
Data Poll or Toggle Bit Successfully Completed
Erasure Completed
Chip Erase Command Sequence (Address/Command)
Individual Sector/Multiple Sector Erase Command Sequence (Address/Command)
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/80H
5555H/80H
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/10H
Sector Address/30H
Sector Address/30H Additional Sector Erase Commands are Optional Sector Address/30H
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Figure 5 Toggle Bit Algorithm
Figure 6 Data Polling Algorithm
Start VA = Byte Address for Programming = Any of the Sector Addresses within the sector being erased during sector erase operation = XXXXH during Chip Erase
Start VA = Byte Address for Programming = Any of the Sector Addresses within the sector being erased during sector erase operation = XXXXH during Chip Erase
Read Byte D0-D7 Address = VA
Read Byte D0-D7 Address = VA
D6 = Toggle ? Yes No
No
D7 = Toggle? No No
Yes
D5 = 1 ? Yes Read Byte D0-D7 Address = VA
D5 = 1 ? Yes Read Byte D0-D7 Address = VA
D6 = Toggle? (Note 1) Yes Fail
No
D7 = Data ? Pass Fail No
Yes
Pass
Note 1. D6 is rechecked even if D5 = "1" because D6 may stop toggling at the same time as D5 changes to "1".
Note 1. D7 is rechecked even if D5 = "1" because D7 may change simultaneously with D5.
Aeroflex Circuit Technology
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SCD1668 REV A 4/28/98
Plainview NY (516) 694-6700
Figure 7 AC Waveforms for Read Operations
tRC
Addresses Addresses Stable
tACC
CE
tDF
OE
tOE
WE
tCE
Outputs High Z
tOH
Output Valid High Z
Figure 8 Write/Erase/Program Operation, WE Controlled
Data Polling Addresses 5555H tWC CE tGHWL OE tWP WE tCE tDH AOH Data tDS PD D7 DOUT tOH tOE tWPH tDF tWHWH1 tAS PA tAH PA tRC
5.0V tCE
Notes: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D7 is the 0utput of the complement of the data written to the deviced. 4. Dout is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence.
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SCD1668 REV A 4/28/98
Plainview NY (516) 694-6700
Figure 9 AC Waveforms Chip/Sector Erase Operations
tAH Addresses 5555H tAS 2AAAH Data Polling 5555H 5555H 2AAAH SA
CE tGHWL OE tWP WE tCE Data tWPH tDH AAH tDS VCC 55H 80H AAH 55H 10H/30H
tVCE
Notes: 1. SA is the sector address for sector erase.
Figure 10 AC Waveforms for Data Polling During Embedded Algorithm Operations
tCH
CE
tDF tOE
OE
tOEH
WE
tCE tOH *
DQ7 DQ7 DQ7= Valid Data High Z
tWHWH1 or 2
DQ0-DQ6 DQ0-DQ6=Invalid
DQ0-DQ6 Valid Data
tOE
* DQ7=Valid Data (The device has completed the Embedded operation).
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SCD1668 REV A 4/28/98
Plainview NY (516) 694-6700
Figure 11 Sector Protection Algorithm
Start
Set Up Sector Address (A18, A17, A16)
PLSCNT = 1
OE = VID A9 = VID, CE = VIL
Activate WE Pulse
Time Out 100s
Increment PLSCNT
Power Down OE WE = VIH CE = OE = VIH A9 Should Remain VID
Read From Sector Address = SA, A0 = 0, A1 = 1, A6 = 0
No No PLSCNT = 25 ? Yes Data = 01H ?
Yes
Device Failure
Protect Another Sector?
Yes
No Remove VID from A9 Write Reset Command
Sector Protection Complete
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SCD1668 REV A 4/28/98
Plainview NY (516) 694-6700
Figure 12 Sector Unprotect Algorithm
Start
Protect All Sectors
PLSCNT = 1
Set Up Sector Unprotect Mode A12 = A16 = VIH
Set OE = CE = A9 = VID
Activate WE Pulse Increment PLSCNT Time Out 10 msms
Set OE = CE = VIL A9 = VID
Setup Sector Address SA0 Set A1 = 1, A0 = 0, A6 = 1
Read Data From Device No Increment Sector Address
No Data = 00H ? PLSCNT = 1000 ?
Yes
Yes
No
Sector Address = SA7 ?
Device Failure
Yes
Notes: SA0 = Sector Address for initial sector SA7 = Sector Address for last sector Please refer to Table 2
Remove VID from A9
Sector Unprotect Completed
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SCD1668 REV A 4/28/98
Plainview NY (516) 694-6700
Figure 13 Alternate CE Controlled Programming Operation Timings
Data Polling Addresses 5555H tWC CE tGHWL OE tCP WE tWS tCPH tDH AOH Data tDS PD D7 DOUT tWHWH1 tAS PA tAH PA
5.0V
Notes: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D7 is the 0utput of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence.
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SCD1668 REV A 4/28/98
Plainview NY (516) 694-6700
Pin Numbers & Functions
32 Pins -- DIP Package
1 2 3 4 5\ 6 7 8 9 10 11 12 13 14 15 16 A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 I/O3 I/O4 I/O5 I/O6 I/O7 CS A10 OE A11 A9 A8 A13 A14 A17 WE VCC
Package Outline "P4" -- .590" x 1.67" DIP Package
1.686 1.654 Pin 32
Pin 1
.200 .145
.605 .580
.100 TYP
.055 .045
.020 .016
.048 .019
.125 MIN
.012 .009
.610 .590
All dimensions in inches
Aeroflex Circuit Technology
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SCD1668 REV A 4/28/98
Plainview NY (516) 694-6700
Pin Numbers & Functions
32 Pins -- Flat Package
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 I/O3 I/O4 I/O5 I/O6 I/O7 CS A10 OE A11 A9 A8 A13 A14 A17 WE VCC
Package Outline "F6" -- 32 Lead, Ceramic Flat Package
0.820 .010
Pin 32
Pin 17
.410 .005
.125 MAX
Pin 1
Pin 16 0.400 MIN +.002 .005 -.001
All dimensions in inches
0.017 .002 .750 (15 spaces at .050) 2 sides
Aeroflex Circuit Technology
19
SCD1668 REV A 4/28/98
Plainview NY (516) 694-6700
Pin Numbers & Functions
32 Pins -- Flat Package
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 I/O3 I/O4 I/O5 I/O6 I/O7 CS A10 OE A11 A9 A8 A13 A14 A17 WE VCC
Package Outline "F7" -- 32 Lead, Ceramic Flat Package
0.820 .010 Pin 32 Pin 17
.132 MAX .006 TYP
Base Plane .125 MAX
.410 .005 .025 TYP Pin 1 0.017 .002 .750 (15 spaces at .050) 2 sides Pin 16
.530 .005
.068 TYP
+.002 .005 -.001
0 / -4
.030 TYP Seating Plane
All dimensions in inches
Aeroflex Circuit Technology
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SCD1668 REV A 4/28/98
Plainview NY (516) 694-6700
CIRCUIT TECHNOLOGY
Ordering Information
Model Number
ACT-F512K8N-150F6Q ACT-F512K8N-120F6Q ACT-F512K8N-090F6Q ACT-F512K8N-070F6Q ACT-F512K8N-060F6Q ACT-F512K8N-150F7Q ACT-F512K8N-120F7Q ACT-F512K8N-090F7Q ACT-F512K8N-070F7Q ACT-F512K8N-060F7Q ACT-F512K8N-150P4Q ACT-F512K8N-120P4Q ACT-F512K8N-090P4Q ACT-F512K8N-070P4Q ACT-F512K8N-060P4Q * Pending
DESC Drawing Number
5962-9669201HUC* 5962-9669202HUC* 5962-9669203HUC* 5962-9669204HUC* 5962-9669205HUC* 5962-9669201HTC* 5962-9669202HTC* 5962-9669203HTC* 5962-9669204HTC* 5962-9669205HTC* 5962-9669201HXC* 5962-9669202HXC* 5962-9669203HXC* 5962-9669204HXC* 5962-9669205HXC*
Speed
150 ns 120 ns 90 ns 70 ns 60ns 150 ns 120 ns 90 ns 70 ns 60ns 150 ns 120 ns 90 ns 70 ns 60ns
Package
Flat Pack Flat Pack Flat Pack Flat Pack Flat Pack Flat Pack (Formed) Flat Pack (Formed) Flat Pack (Formed) Flat Pack (Formed) Flat Pack (Formed) DIP Pack DIP Pack DIP Pack DIP Pack DIP Pack
Part Number Breakdown
ACT- F 512K 8 N- 090 F6 Q
Aeroflex Circuit Technology Memory Type F = FLASH EEPROM Memory Depth Memory Width, Bits Options N = None Memory Speed, ns Screening C = Commercial Temp, 0C to +70C I = Industrial Temp, -40C to +85C T = Military Temp, -55C to +125C M = Military Temp, -55C to +125C, Screening * Q = MIL-PRF-38534 Compliant / SMD Package Type & Size Surface Mount Packages F6 = .82" x .40" 32 Lead FP Unformed F7 = .82" x .40" 32 Lead FP Formed Thru-Hole Packages P4 = 32 Pin DIP
Screened to the individual test methods of MIL-STD-883 Specifications subject to change without notice.
*
Aeroflex Circuit Technology 35 South Service Road Plainview New York 11830
Aeroflex Circuit Technology
Telephone: (516) 694-6700 FAX: (516) 694-6715 Toll Free Inquiries: 1-(800) 843-1553
21
SCD1668 REV A 4/28/98 Plainview NY (516) 694-6700

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